 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BAR 81 Silicon RF Switching Diode Preliminary data * Design for use in shunt configuration * High shunt signal isolation * Low shunt insertion loss Type BAR 81 Marking Ordering Code BBs Q62702Q62702-A1145 Pin Configuration 1=C 2=A 3=C 4=A Package MW-4 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 ... + 125 - 55 ... + 150 Unit V mA C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 0.93 20 nA V 1 VR = 20 V, TA = 25 C Forward voltage VF IF = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf - nH IF = 5 mA, f = 100 MHz Series inductance chip to ground Ls Semiconductor Group 2 Feb-26-1996 BAR 81 Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Package Semiconductor Group 3 Feb-26-1996 |
Price & Availability of Q62702-A1145
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |